Process to incorporate nitrogen at an interface of a dielectric

Details Process to incorporate nitrogen at an interface of a dielectric Process to incorporate nitrogen at an interface of a dielectric

1994-01-27

1995-11-07

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437241, 437242, H01L 21225

Patent

active

054647924

ABSTRACT:
Nitrogen is piled-up at a top interface of a gate dielectric layer by a process of the present invention. A gate dielectric layer (14) is formed on a substrate (12). A buffer layer (16), such as polysilicon, is formed on the dielectric layer. A nitrogen source layer (18), such as oxynitride, is formed on the buffer layer. The device is annealed to drive nitrogen from the source layer through the buffer layer and to an interface (15) between the polysilicon and the dielectric, resulting in a high nitrogen concentration at this interface. A nitrogen concentration may also be achieved at an interface (13) between the dielectric layer and the substrate.

REFERENCES:
patent: 5063423 (1991-11-01), Fuji et al.
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H. Fukuda et al., "High-Performance Scaled Flash-Type EEPROMs With Heavily Oxynitrided Tunnel Oxide Films", IEEE IEDM 1992, pp. 465-468.
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