Method of fabricating an antifuse element having an etch-stop di

Details Method of fabricating an antifuse element having an etch-stop di Method of fabricating an antifuse element having an etch-stop di

1994-07-28

1995-11-07

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437228, 437195, 437170, 437922, H01L 2170, H01L 2700

Patent

active

054647908

ABSTRACT:
A dielectric layer through which an antifuse via or an antifuse contact via is to be formed comprises a sandwich of at least two, and preferably three, individual layers. A first etch-stop dielectric layer is disposed over an underlying layer comprising either a lower or upper antifuse electrode barrier layer or an antifuse material layer. The first etch-stop dielectric layer comprises a thin layer of dielectric material. An isolation dielectric layer is disposed over the first etch-stop dielectric layer and comprises a second material comprising most of the thickness of the sandwich and having a substantial etch-time differential from the first etch-stop dielectric material for a selected etchant for the first etch-stop dielectric material. A second etch-stop dielectric layer may be provided under the first etch-stop dielectric layer and may be formed from a third material having a substantial etch time differential from the first etch-stop dielectric material for a selected etchant for the first material. A process for forming a via according to the present invention comprises, in order, the steps of forming the first etch-stop, isolation, masking the sandwich of dielectric layers for formation of a via; etching the isolation dielectric layer with an over-etch, stopping on the underlying first etch-stop dielectric layer; etching the first etch-stop dielectric layer with high over-etch, stopping on the layer beneath it.

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