Method of making polycrystalline silicon resistors for integrate

Details Method of making polycrystalline silicon resistors for integrate Method of making polycrystalline silicon resistors for integrate

1990-05-31

1992-09-29

Thomas, Tom

Fishing, trapping, and vermin destroying

437 48, 437 52, 437 60, 437228, 437918, H01L 2170

Patent

active

051513765

ABSTRACT:
A method for fabricating polycrystalline silicon resistor structures includes steps directed to the provision of a polycrystalline silicon structure having a decreased width. In one embodiment, sidewall spacers are used to narrow a region in which the polycrystalline silicon resistors are formed. In an alternative embodiment, polycrystalline silicon resistors are formed as sidewall structures in a resistor region. Use of either technique provides a reduced cross-section for the resistor structures, allowing shorter resistors to be used, or providing increased resistance for longer resistors.

REFERENCES:
patent: 4146902 (1979-03-01), Tamimoto et al.
patent: 4315239 (1982-02-01), Damiele et al.
patent: 4464212 (1984-08-01), Bhatia et al.
patent: 4892839 (1990-01-01), Ito et al.

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