Method of forming a thin film field effect transistor having a d

Details Method of forming a thin film field effect transistor having a d Method of forming a thin film field effect transistor having a d

1991-07-24

1992-09-29

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 29, 437 41, 437 44, 437 52, 148DIG150, H01L 21265

Patent

active

051513749

ABSTRACT:
A process for forming a thin film field effect transistor, particularly adapted for use in SDRAM devices using CMOS flip-flop circuits, wherein the transistor has a drain-channel P-N junction that is precisely spaced from the gate electrode, the process involving the etch back of the edge of the gate electrode, either prior to ion implantation to form the source and drain, or following the implantation.

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patent: 4992392 (1991-02-01), Nichols et al.
patent: 4997779 (1991-03-01), Kohno
patent: 5036017 (1991-07-01), Noda

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