Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Patent
1998-08-20
2000-10-24
Hardy, David
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
257619, 257622, 257775, 257776, 257754, 257763, 257770, 257649, H01L 2348
Patent
active
061371823
ABSTRACT:
A semiconductor process for forming an interlevel contact. A semiconductor wafer is provided with a semiconductor substrate, a first conductive layer formed on the substrate, and a dielectric layer formed on the conductive layer. A border layer, preferably comprised of polysilicon or silicon nitride is formed on the dielectric layer. Portions of the border layer are then selectively removed to expose an upper surface of a spacer region of the dielectric layer, the selective removal of the border layer resulting in a border layer having an annular sidewall extending upward from the dielectric layer and encircling the spacer region. A spacer structure is then formed on the annular sidewall, preferably, the spacer structure is formed by chemically vapor depositing a spacer material and anisotropically etching the spacer material to just clear in the planar regions with minimum overetch. The spacer structure thereby covering peripheral portions of the spacer region such that an upper surface of a contact region remains exposed. Portions of the dielectric layer within the contact region are then removed to form a via extending from an upper surface of the spacer structure to an upper surface of the first conductive layer. Preferably, the lateral dimension of the spacer region is approximately equal to the minimum feature size of a photolithography exposure apparatus in the lateral dimension of the via at substantially less than the minimum feature size of the photolithography exposure apparatus.
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Dawson Robert
Gardner Mark I.
Hause Fred N.
Advanced Micro Devices , Inc.
Daffer Kevin L.
Hardy David
Warren Matthew E.
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