Patent
1990-06-08
1992-10-20
Hille, Rolf
357 55, 357 67, 357 68, 357 81, H01L 2302
Patent
active
051574799
ABSTRACT:
A silicon substrate having a thin film circuit layer formed on the surface of the substrate is laid on a metallic base and a semiconductor chip made of compound semiconductor such as gallium arsenide is disposed in a hole defined in the central portion of the silicon substrate so that the semiconductor chip can be directly fixed to the metallic base for dissipating the heat of the semiconductor chip. The connecting terminals of the semiconductor chip are connected to thin film circuit layer formed on the surface of the silicon substrate through wires. The heat generated in the semiconductor chip can be transmitted to the metallic base so that the heat is effectively dissipated.
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IBM Technical Disclosure Bulletin, vol. 14, No. 11, Apr. 1972, "Replaceable chip to heat sink connection on circuit Boards", by W. E. Dunkel, p. 3332.
R. W. Johnson et al., "Silicon Hybrid Wafer-Scale Package Technology", IEEE Journal of Solid-State Circuits, vol. SC-21, No. 5, Oct. 1986, pp. 845-851.
Nishiguchi Masanori
Sekiguchi Takeshi
Hille Rolf
Loke Steven
Sumitomo Electric Industries Ltd.
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