Process for fabricating polycrystalline semiconductor thin-film

Details Process for fabricating polycrystalline semiconductor thin-film Process for fabricating polycrystalline semiconductor thin-film

1998-12-22

2000-10-24

Chapman, Mark

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

136265, 136256, 438487, H01L 3100

Patent

active

061370487

ABSTRACT:
A novel, simplified method for fabricating a thin-film semiconductor heterojunction photovoltaic device includes initial steps of depositing a layer of cadmium stannate and a layer of zinc stannate on a transparent substrate, both by radio frequency sputtering at ambient temperature, followed by the depositing of dissimilar layers of semiconductors such as cadmium sulfide and cadmium telluride, and heat treatment to convert the cadmium stannate to a substantially single-phase material of a spinel crystal structure. Preferably, the cadmium sulfide layer is also deposited by radio frequency sputtering at ambient temperature, and the cadmium telluride layer is deposited by close space sublimation at an elevated temperature effective to convert the amorphous cadmium stannate to the polycrystalline cadmium stannate with single-phase spinel structure.

REFERENCES:
patent: 4231808 (1980-11-01), Tabei et al.
patent: 4445965 (1984-05-01), Milnes
patent: 4595790 (1986-06-01), Basol
patent: 4595791 (1986-06-01), Basol et al.
patent: 4596645 (1986-06-01), Stirn
patent: 4647711 (1987-03-01), Basol et al.
patent: 4709466 (1987-12-01), McCandless et al.
patent: 5180476 (1993-01-01), Ishibashi et al.
patent: 5261968 (1993-11-01), Jordan
patent: 5304399 (1994-04-01), Shibata et al.
patent: 5304499 (1994-04-01), Bonnet et al.
patent: 5393675 (1995-02-01), Compaan
patent: 5714391 (1998-02-01), Omura et al.
Wu X.; Sheldon, P.; Mahathongdy, Y.; Ribelin, R.; Mason, A.; Moutinho, H.R.; Coutts, T.J.; CdS/CdTe Thin-Film Solar Cell with a Zinc Stannate Buffer Layer, NREL, Department of Energy, Oct. 1998.
Wu, X.; Sheldon, P.; Coutts, T.J.; Rose D.H.; Moutinho, H.R.; Application of Cd2SnO4 Transparent Conducting Oxides in Cd2S/CdTe Thin-Film Devices, NREL, Department of Energy, 26th PVSD, pp. 347-350, Sep. 30-Oct. 3, 1997.
Wu, X.; Sheldon, P.; Coutts, T.J.; Rose, D.H.; Mulligan, W.P.; Moutinho, H.R.; CP394, NREL, Department of Energy, Photovoltaics Program Review, CdS/CdTe Thin-Film Devices Using a Cd2SnO4 Transparent Conducting Oxide, pp 693-702, AIP Press, 1997.

Affiliated with

Also associated with

Rating

Process for fabricating polycrystalline semiconductor thin-film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for fabricating polycrystalline semiconductor thin-film , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for fabricating polycrystalline semiconductor thin-film will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1965867