Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Patent
1996-09-17
1998-05-26
Tran, Minh-Loan
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
257422, 257426, 257427, H01L 2982
Patent
active
057570558
ABSTRACT:
A triple drain magnetic field effect transistor (MagFET) for measuring magnetic field. The disclosed MagFET has a gate, a source, a center drain and two lateral drains and generates an increased Hall voltage between the two lateral drains. The MagFET provides a high conductivity channel disposed between the center drain and the source to allow a high sense current to flow. The relationship between the sense current and the background carrier concentration of the lateral drains of the transistor are effectively reduced or decoupled in order to provide the increased Hall voltage between the lateral drains in response to a magnetic field. The sense current is decoupled from the background carrier concentration of the lateral drains of the transistor by suppressing the threshold adjust ion implantation step of the high conductivity channel such that when measuring magnetic field, the carrier concentration of the high conductivity channel is greater than the carrier concentration of the regions of the two lateral drains of the MagFET.
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Intel Corporation
Tran Minh-Loan
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