Non-volatile semiconductor memory device and manufacturing metho

Details Non-volatile semiconductor memory device and manufacturing metho Non-volatile semiconductor memory device and manufacturing metho

1994-02-28

1996-03-19

Clawson, Jr., Joseph E.

Static information storage and retrieval

Floating gate

Particular biasing

257316, 257321, 257324, 257637, 257638, 257640, 257649, G11C 1604

Patent

active

055008160

ABSTRACT:
A tunnel insulating film is formed on a main surface of a silicon substrate. A floating gate electrode is formed on the tunnel insulating film. A nitride layer formed of a material of the floating gate electrode is formed in the vicinity of an interface between the floating gate electrode and the tunnel insulating film located in a tunnel region A. Therefore, the write/erase characteristics of a non-volatile semiconductor memory device can be improved without decreasing the driving capability of a memory transistor at lower voltages.

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Appl. Phys. Lett. 60(12), 23 Mar. 1992, pp. 1489-1491, A. Joshi et al, International Electron Device Meeting, 1991, pp. 649-652, S. Kunsunoki et al.

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