Patent
1989-05-16
1992-10-20
Jackson, Jr., Jerome
357 235, 357 41, 357 24, H01L 2978
Patent
active
051574713
ABSTRACT:
A semiconductor non-volatile memory device, has plural data storage parts which are connected in series between the source region and drain region. In such a constitution, when integrating the semiconductors, the relative area occupied by the selection gate, separation gate, source region and drain region of the area of the data storage parts may be drastically reduced, and the degree of integration of the semiconductor non-volatile memory device can be dramatically enhanced. The device also allows for setting the semiconductor substrate in a depletion state by sequentially varying the gate potential of the plural data storage parts and transferring the electric charges sequentially. By this transferring of electric charges, data write errors may be prevented.
REFERENCES:
patent: 3893152 (1975-07-01), Lin
patent: 4233526 (1980-11-01), Kurogi et al.
patent: 4380804 (1983-04-01), Lockwood et al.
patent: 4476478 (1984-10-01), Noguchi et al.
patent: 4501007 (1985-02-01), Jensen
patent: 4613956 (1986-09-01), Paterson et al.
patent: 4652339 (1987-03-01), Bluzer et al.
patent: 4803706 (1989-02-01), Murayama et al.
patent: 4903098 (1990-02-01), Smit et al.
Vieth, Nitride-oxide layer proof memory against data loss, Jul. 5, 1971 Electronics, p. 53 357 & 23.5.
Kojima Makoto
Takata Takashi
Jackson, Jr. Jerome
Matsushita Electronics Corporation
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