Mode control of heterojunction injection lasers and method of fa

Details Mode control of heterojunction injection lasers and method of fa Mode control of heterojunction injection lasers and method of fa

1979-07-27

1981-07-07

Davie, James W.

Oscillators

Molecular or particle resonant type

H01S 319

Patent

active

042777623

ABSTRACT:
Mode control both for longitudinal and fundamental transverse modes can be achieved by employing a mesa structure on the laser substrate during fabrication. The mesa will provide significant variations in the thickness of one or more hetrostructure waveguiding layers that may be fabricated on the mesa formed substrate. As a result, the equivalent index of refraction for each waveguiding layer will be different. For longitudinal mode operation, a branching directional coupler can be directly fabricated during preferential LPE growth due to the presence of the mesa formed on the substrate. For fundamental transverse mode operation, oscillation can be restricted to a high gain region in a waveguiding layer due to the presence of the mesa and thickness variation and curvature in the active layer. Connected or juxtaposed stripe contact geometry can also be employed to provide a multicavity effect in a light waveguiding layer to enhance longitudinal mode selectivity.

REFERENCES:
patent: 3479614 (1969-11-01), Ashkin
patent: 4190809 (1980-02-01), Goodman et al.

Affiliated with

Also associated with

Rating

Mode control of heterojunction injection lasers and method of fa does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Mode control of heterojunction injection lasers and method of fa, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Mode control of heterojunction injection lasers and method of fa will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-196245