Interferometric semiconductor laser device

Details Interferometric semiconductor laser device Interferometric semiconductor laser device

1985-12-04

1988-10-11

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, 372 46, H01S 319

Patent

active

047776374

ABSTRACT:
An interferometric semiconductor laser device having a built-in effective refraction index difference, based on the absorption of light by a substrate, between the portion of the active layer corresponding to the inside area of a striped channel formed on the surface of said substrate and the portion of the active layer corresponding to the outside area of said striped channel, wherein regions, which are positioned between the active layer and the substrate in the outside area of said channel along a waveguide formed in the active layer corresponding to said channel, are different from each other in the distance between the active layer and the substrate, thereby creating a difference in the effective refraction index between the portions of the active layer corresponding to said regions.

REFERENCES:
patent: 4166253 (1979-08-01), Small et al.
patent: 4592060 (1986-05-01), Hayakawa et al.

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