Semiconductor memory device and a process for producing the same

Details Semiconductor memory device and a process for producing the same Semiconductor memory device and a process for producing the same

1988-10-05

1989-10-10

James, Andrew J.

357 231, 357 2311, 357 51, 357 59, 357 71, H01L 2978

Patent

active

048735590

ABSTRACT:
Dynamic RAM having memory cells, each of the memory cells having a capacitor with the electrode comprised of a first semiconductor region of a first type of conductivity formed in a substrate of second conductivity type. The first semiconductor region is formed by introducing impurities using a mask comprising (1) a nitride film which is deposited so as to define part of the shape of the capacitor. An oxide film, formed by thermal oxidation of the substrate, defines the shape of the memory cells, and each of the memory cells further have at least a second semiconductor region of a second type of conductivity formed between and under the electrodes, the shape thereof being defined by the nitride film and the oxide film that is formed by thermal oxidation.

REFERENCES:
patent: 4455566 (1984-06-01), Sakurai
patent: 4511911 (1985-04-01), Kenney
patent: 4684971 (1987-08-01), Payne
patent: 4688064 (1987-08-01), Ogura et al.

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