LC element, semiconductor device and LC element manufacturing me

Details LC element, semiconductor device and LC element manufacturing me LC element, semiconductor device and LC element manufacturing me

1994-07-22

1996-03-19

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257532, H01L 2900

Patent

active

055005527

ABSTRACT:
An LC element, semiconductor device and a manufacturing method thereof whereby a channel 22 is formed by applying a voltage to a gate electrode 10 having a predetermined shape formed on a p-Si substrate 30 via an insulation layer 26, whereby a connection is formed between a first diffusion region 12 and a second diffusion region 14 formed at separated positions near the surface of the p-Si substrate 30; both the channel 22 and gate electrode 10 function as inductors, and between these a distributed constant type capacitor is formed, and possessing excellent attenuation characteristics over a wide band. This LC element and semiconductor device can be easily manufactured by using MOS manufacturing technology; in the case of manufacturing as a portion of a semiconductor substrate, component assembly work in subsequent processing can be omitted. Also these can be formed as a portion of an IC or LSI device.

REFERENCES:
patent: 4819047 (1989-04-01), Gilfeather et al.
patent: 5136357 (1992-08-01), Hesson et al.
patent: 5227659 (1993-07-01), Hubbard

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