Method for providing silicide bridge contact between silicon reg

Details Method for providing silicide bridge contact between silicon reg Method for providing silicide bridge contact between silicon reg

1988-09-01

1989-10-10

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437201, 437192, 437 90, 437 83, 437 60, 437 52, 437967, 437968, 148DIG25, 148DIG26, 156612, 357236, 357 67, H01L 21205, H01L 21283, H01L 21314

Patent

active

048732052

ABSTRACT:
A method for forming a silicide bridge bewteen a diffusion region and an adjacent poly-filled trench separated by a thin dielectric. Silicon is selectively grown over exposed silicon regions under conditions that provide controlled lateral growth over the thin dielectric without also permitting lateral growth over other insulator regions. A refractory metal layer is then deposited and sintered under conditions that limit lateral silicide growth, forming the bridge. This process avoids the random fails produced by previous processes while enhancing the compatibility of bridge formation with shallow junctions, without introducing extra masking steps or other process complexities.

REFERENCES:
patent: 3375418 (1968-03-01), Garnache et al.
patent: 3753774 (1973-08-01), Velolic
patent: 4333099 (1982-06-01), Tanguay et al.
patent: 4374700 (1983-02-01), Scott et al.
patent: 4458410 (1984-07-01), Sujaki et al.
patent: 4522662 (1985-06-01), Bradbury et al.
patent: 4578142 (1986-03-01), Corboy, Jr. et al.
patent: 4579621 (1986-04-01), Hine
patent: 4592792 (1986-06-01), Corboy, Jr. et al.
patent: 4612072 (1986-09-01), Morrison et al.
patent: 4663191 (1987-05-01), Choi et al.
patent: 4688063 (1987-08-01), Lu et al.
patent: 4737828 (1988-04-01), Brown
patent: 4745081 (1988-05-01), Beyer et al.
Jastrzebski et al., "Growth Process of Silicon Over SiO.sub.2 by CVD" J. Electrochem. Soc., vol. 130, No. 7, Jul. 1983, pp. 1571-1580.
Rathman et al., "Lateral Epitaxial Overgrowth of Silicon on SiO.sub.2 ", J. Electrochem. Soc., vol. 129, No. 10, Oct. 1982, pp. 2303-2306.
Mouchan et al., "Structure and Properties of Thick Vacuum Condensates". . . Fiz. Metal. Metalloued, 28, No. 4, 1969, pp. 83-90.
Choi et al., "CMOS Process for Titanium Salicide Bridging", IBM Tech. Dis. Bull., vol. 29, No. 3, Aug. 1986, pp. 1037-1038.
P. J. Tsuang, "Forming Thick Metal Silicide for Contact Barrier," IBM Technical Disclosure Bulletin, vol. 19, No. 9, Feb. 1977, pp. 3383-3385.
T. M. Reith et al., "Controlled Ohmic Contact and Planarization for Very Shallow Junction Structures," IBM Technical Disclosure Bulletin, vol. 20, No. 9, Feb. 1978, pp. 3480-3483.
IBM Tech. Disc. Bull., vol. 28, No. 6, Nov. 1985, pp. 2335-2336.
Zingg et al., J. Electrochem. Soc., vol. 133, No. 6, Jun. 1986, pp. 1274-1275.

Affiliated with

Also associated with

Rating

Method for providing silicide bridge contact between silicon reg does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for providing silicide bridge contact between silicon reg, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for providing silicide bridge contact between silicon reg will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1957550