Method of making bipolar integrated circuits

Details Method of making bipolar integrated circuits Method of making bipolar integrated circuits

1988-09-23

1989-10-10

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 33, 437 26, 357 59, 357 34, 148DIG124, H01L 21265

Patent

active

048731994

ABSTRACT:
A well structure for a semiconductor device has a dopant profile such that the maximum net dopant level is below the device surface. This is achieved by a two stage doping with materials of opposite conductivity type.

REFERENCES:
patent: 4151009 (1979-04-01), Agureck
patent: 4573064 (1986-02-01), McLevige
patent: 4667218 (1987-05-01), Takahashi
Nakashiba "An Advanced--" IEEE J. Solid State Circuits vol. SC-15 #4, 8/80 , 455-459.
Cuthbertson et al, IEDM 1984, pp. 749-752 "Self Aligned Bipolar".

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