Volatilization and deposition of a semi-conductor substance and

Chemistry: electrical and wave energy – Processes and products – Vacuum arc discharge coating

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148174, 204298, 357 11, 357 30, C23C 1500

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active

040135330

ABSTRACT:
A method and apparatus for producing a thin semi-conductor coating on a substrate in a vacuum enclosure, by depositing on the substrate a semi-conductor substance volatilized by a plasma from a source in the enclosure and also depositing on the substrate a metallic doping impurity volatilized by the plasma from another source in the enclosure.

REFERENCES:
patent: 3261726 (1966-07-01), Ruehrwein
patent: 3324019 (1967-06-01), Laegreid et al.
patent: 3531335 (1970-09-01), Heyerdahl et al.
patent: 3615931 (1971-10-01), Arthur, Jr.
patent: 3716424 (1973-02-01), Schoolar
patent: 3751310 (1973-08-01), Cho
patent: 3765940 (1973-10-01), Hentzschel
patent: 3911469 (1975-10-01), Wrobel
E. L. Hollar et al., "Composite Film Metallizing for Ceramics," J. Electrochem. Soc., vol. 117, No. 11, pp. 1461-1462, (1970).
A. Zozime et al., "Sputtering of CdxHgi-xTe Films in Mercury Vapor Plasma," Thin Solid Films, vol. 13, No. 2, 373-378, (1972).
R. E. Jones et al., "Doping Technique for RF Sputtering," IBM Technical Disclosure Bulletin, vol. 9, No. 10, p. 1417, (Mar. 1967).

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