Resonant tunneling memory

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

Patent

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365175, H01L 2906

Patent

active

058698450

ABSTRACT:
A resonant tunneling diode stack used as a memory cell stack (X0-Xn) with sequential read out of bits of data cells (X1-Xn) by increasing ramp rates to transfer the stored bit to a lowest ramp rate cell (X0).

REFERENCES:
patent: 4999697 (1991-03-01), Capasso et al.

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