Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1993-07-19
1995-11-07
Breneman, R. Bruce
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
75245, 75248, 419 10, 419 23, 419 26, 419 38, 20429812, C23C 1434, C22C 2900, C22C 3200
Patent
active
054645204
ABSTRACT:
Silicide targets for sputtering which have an area ratio of silicon phases that appear on the sputter surface of no more than 23%, and a density of at least 99%, with a deformed layer partly removed from the surface to attain a surface roughness of from more than 0.05 .mu.m to 1 .mu.m, preferably with the number of coarse silicon phases at least 10 .mu.m in diameter that appear on the sputter surface being at most 10/mm.sup.2. The reduction of early-stage particle generation, in turn, reduces secondary particle generation, thus realizing the reduction of particle generation at both early stage and stabilized stage. A Si powder having a maximum particle diameter of no more than 20 .mu.m is mixed with a metal powder having a maximum particle diameter of no more than 60 .mu.m, in a rather Si-lower mixing ratio. A silicide powder is synthesized from the mixture and hot pressed, the sintered compact being machined and surface treated for the removal of the deformed layer. The burden of the deformed layer-removal step on the process is light.
REFERENCES:
patent: 4663120 (1987-05-01), Parent et al.
patent: 4750932 (1988-06-01), Parent et al.
patent: 4938798 (1990-07-01), Chiba et al.
European Search Report concerning European Application No. EP 93112762.5, May 13, 1994 (2 pages).
Anan Junichi
Kano Osamu
Sato Yasuyuki
Wada Hironori
Yamakoshi Yasuhiro
Breneman R. Bruce
Japan Energy Corporation
McDonald Rodney G.
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