Patent
1980-11-19
1983-08-23
Edlow, Martin H.
357 55, 357 4, H01L 2712
Patent
active
044007159
ABSTRACT:
A process for the preparation of a semiconductor device in a thin film of a monocrystalline semiconductor material supported on the surface of a substrate. In the process a thin film of a monocrystalline semiconductor material is formed on a substrate. The film of monocrystalline semiconductor material is doped at various depths with various types and concentrations of dopants. Thereafter, contacts are established at various depths of the doped thin film. In one embodiment, a thin film of a non-monocrystalline semiconductor material is deposited on a substrate. The thin film of non-monocrystalline semiconductor material is doped in situ as it is being deposited with various doping impurities to provide various types and concentrations of doping impurities at various depths. The thin film of non-monocrystalline semiconductor material has at least one tapered region terminating in a point. The thin film of non-monocrystalline semiconductor material is traversed with a particle beam. The traverse is initiated at the point causing nucleation of a crystal at the point and subsequent growth of a monocrystalline thin film of semiconductor material from the point during the traverse. Contacts are then established at various depths to provide a semiconductor device, such as a bipolar transistor.
REFERENCES:
patent: 2992903 (1961-07-01), Imber
patent: 3160521 (1964-12-01), Ziegler et al.
patent: 3160522 (1964-12-01), Heywang et al.
patent: 3348962 (1967-10-01), Grossman et al.
patent: 3600237 (1971-08-01), Davis et al.
patent: 4035829 (1977-07-01), Ipri
patent: 4046618 (1977-09-01), Chaudhari et al.
patent: 4058418 (1977-11-01), Lindmayer
patent: 4140558 (1979-02-01), Murphy
patent: 4196041 (1980-04-01), Baghdadi et al.
patent: 4211582 (1980-07-01), Horng
patent: 4252579 (1981-02-01), Ho
IBM Technical Disclosure Bulletin, vol. 19, No. 10, Mar. 1977, pp. 3955 and 3956, entitled "Crystallization of Silicon for Solar Cell Applications", by R. J. von Gutfeld.
Barbee Steven G.
Leas James M.
Lloyd James R.
Nagarajan Arunachala
Bigel Mitchell S.
Edlow Martin H.
International Business Machines - Corporation
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