Resonant tunneling fet and methods of fabrication

Details Resonant tunneling fet and methods of fabrication Resonant tunneling fet and methods of fabrication

1995-02-09

1996-09-03

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 41, 437126, 437912, 437175, H01L 21265, H01L 2120, H01L 2144

Patent

active

055523307

ABSTRACT:
A resonant tunneling FET including a heterostructure FET with a channel layer having a first current contact and a control contact operatively coupled thereto and a resonant tunneling device, including a quantum well layer sandwiched between barrier layers with a resonant tunneling layer affixed to an opposite side of one barrier layer, operably affixed to the heterostructure FET to form a second current contact. The resonant tunneling FET being constructed from a material system which allows the fabrication of additional devices on the same substrate.

REFERENCES:
patent: 5021857 (1991-06-01), Suehiro
patent: 5060031 (1991-10-01), Abrokwah et al.
patent: 5105241 (1992-04-01), Ando
patent: 5113231 (1992-05-01), Soderstrom et al.
patent: 5302840 (1994-04-01), Takikawa
Appl. Phys. Lett. 51(19), 9 Nov. 1987, "Integration of a resonant-tunneling structure with a metal-semiconductor field-effect transistor" by Woodward et al., p. 1542-1544.

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