Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1992-03-26

1993-06-08

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

052186148

ABSTRACT:
A semiconductor laser device has a thyristor current confinement structure at both sides of an active region. A p-n junction in the current confinement structure is forward biased during laser operation and is short-circuited by a metal layer or a low resistance material layer. Therefore, injection of holes from the p layer into the n layer of the short-circuited junction during laser operation is suppressed whereby the thyristor current confinement structure is not likely to be turned on. In addition, the current flowing through the blocking layer is decreased. As a result, current blocking is significantly improved, preventing a reduction in the laser output power and a reduction in the linearity of the light output versus current characteristic of the laser.

REFERENCES:
Ishiguro et al, "Very Low Threshold Planar Buried Heterostructure InGaAsP/InP Laser Diode Prepared By Three-Stage Metalorganic Chemical Vapor Deposition", Applied Physics Letters, vol. 51, No. 12, 1987, pp. 874-876.

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