Semiconductor processing methods, and methods of forming capacit

Semiconductor device manufacturing: process – Making passive device – Stacked capacitor

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Details

438398, 438254, H01L 2170

Patent

active

061272396

ABSTRACT:
In one aspect, the invention includes: a) forming a first opening into a substrate surface; b) forming a polysilicon layer over the substrate surface and within the first opening to a thickness which less than completely fills the first opening to leave a second opening within the first opening; c) forming a coating layer over the polysilicon layer and within the second opening; d) etching the coating layer and the polysilicon layer to remove the coating layer and the polysilicon layer from over the substrate surface and leave the coating layer and the polysilicon layer within the opening; and e) after the etching, removing the coating layer from within the opening. In another aspect, the invention includes: a) forming a first opening into a substrate surface; b) forming a polysilicon layer over the substrate surface and within the first opening to a thickness which less than completely fills the first opening to leave a second opening within the first opening, the polysilicon having a surface with a first degree of roughness; c) forming a coating layer over the polysilicon layer and within the second opening, the coating layer having a surface with a second degree of roughness which is less than the first degree of roughness; d) etching the coating layer and the polysilicon layer to remove the coating layer and the polysilicon layer from over the substrate surface and leave the coating layer and the polysilicon layer within the opening; and e) after the etching, removing the coating layer from within the opening.

REFERENCES:
patent: 5191509 (1993-03-01), Wen
patent: 5468979 (1995-11-01), Tani et al.
patent: 5811283 (1998-09-01), Sun
patent: 5856007 (1999-01-01), Sharan et al.
patent: 5888877 (1999-03-01), Dennison et al.

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