Semiconductor device and method of manufacturing same

Details Semiconductor device and method of manufacturing same Semiconductor device and method of manufacturing same

1991-09-24

1993-06-08

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

257511, H01L 2972, H01L 2704

Patent

active

052182274

ABSTRACT:
An n type buried layer (2b) lying in the lower part of a PNP transistor (101a) is lower in impurity concentration than an n.sup.+ type buried layer (2a) lying in the lower part of an NPN transistor (100). A p.sup.+ type buried layer (4a) is formed thick on the n type buried layer (2b) and insulated from the n.sup.+ type buried layer (2a) by an isolation trench (7). A breakdown voltage at a junction of the p.sup.+ type buried layer (4a) and the n type buried layer (2b) can be improved and, accordingly, the breakdown voltage of the whole device being improved. Low-controlled collector resistance of the PNP transistor (101a) prevents an amplification factor from decreasing.

REFERENCES:
patent: 4898836 (1990-02-01), Zambrano et al.

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