Structures to extract defect size information of poly and source

Details Structures to extract defect size information of poly and source Structures to extract defect size information of poly and source

1995-06-07

1997-09-23

Nguyen, Vinh P.

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

324716, G01R 3126

Patent

active

056708912

ABSTRACT:
An apparatus and method for detecting defect sizes in polysilicon and source-drain semiconductor devices and methods for making the same. Implemented is a double bridge test structure that includes a resistor path of first semiconductor material, such as doped silicon comprising a plurality of strip segments and with interconnection segments. A plurality of strips of second semiconductor material having a substantially lower resistivity are connected to form parallel circuit interconnections with the corresponding strip segments. The test structure is formed by masking techniques wherein a prescribed mask region enables portions of the silicon resistor or deposited polysilicon to be selectively silicided to form silicide and polycide, respectively. One embodiment for testing for defects in a polysilicon layer uses polycide as the low-resistivity strips, enabling the testing of open and short-circuit defects. A second embodiment selectively silicides exposed portions of a source-drain resistor, thereby enabling testing for defects in a source-drain layer of a metal oxide semiconductor. Defect sizes are determined by comparing the measured resistance values with predetermined width and spacings of the strips.

REFERENCES:
patent: 4100486 (1978-07-01), Casowitz et al.
patent: 4835466 (1989-05-01), Maly et al.
patent: 5051690 (1991-09-01), Maly et al.
Jitendra B. Khare et al., "Extraction of Defect Size Distributions in an IC Layer Using Test Structure Data", IEEE, Transactions on Semiconductor Manufacturing, vol. 7, Aug. 1994.

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