Method of forming metal interconnection layer of semiconductor d

Details Method of forming metal interconnection layer of semiconductor d Method of forming metal interconnection layer of semiconductor d

1995-11-08

1997-09-23

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437190, 437192, 437195, H01L 2144, H01L 2148

Patent

active

056704208

ABSTRACT:
A method of forming a metal interconnection layer of a semiconductor device is disclosed as forming a barrier metal for preventing an atomic migration between a metal film for an interconnection and a lower conduction layer being contacted with the metal film by an ion implantation, so that it prevents metal atoms diffusing into a Si substrate in a deep and narrow contact hole and it makes a copper film to be deposited on an oxide with ease, thereby carrying out an excellent metallization process.

REFERENCES:
patent: 4742014 (1988-05-01), Hooper et al.
patent: 5071518 (1991-12-01), Pan
patent: 5130274 (1992-07-01), Harper et al.
patent: 5312774 (1994-05-01), Nakamura et al.
patent: 5391517 (1995-02-01), Gelatos et al.

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