Method of forming a DMOS-controlled lateral bipolar transistor

Details Method of forming a DMOS-controlled lateral bipolar transistor Method of forming a DMOS-controlled lateral bipolar transistor

1995-11-21

1997-09-23

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 31, 437 34, 437 59, H01L 21265

Patent

active

056703961

ABSTRACT:
DMOS-controlled lateral bipolar transistor comprises a first region of a first conductivity type for providing a collector, a second region of a second conductivity type opposite the first conductivity type for providing a base, a third region of the first conductivity type for providing an emitter, a dielectric on the second region, and an electrode on the dielectric wherein the electrode provides a gate for a DMOS transistor, the first region provides a drain for the DMOS transistor, the second region provides a channel region for the DMOS transistor, and the third region provides a source for the DMOS transistor.

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