Thyristor with a multi-layer semiconductor body with a pnpn laye

Details Thyristor with a multi-layer semiconductor body with a pnpn laye Thyristor with a multi-layer semiconductor body with a pnpn laye

1982-07-15

1984-08-21

Clawson, Jr., Joseph E.

357 55, 357 60, H01L 2974

Patent

active

044673434

ABSTRACT:
The invention relates to a thyristor with a multi-layer semiconductor body with a pnpn layer sequence which has two boundary surfaces which lie essentially parallel to the pn-junctions between the individual layers. The thyristor has a doubly slanted edge (or dove-tail profile) which can be produced without mechanical work steps. To this end, such boundary surfaces are oriented in the {100} direction and are rectangularly configured and also have lateral limits which proceed parallel to the {100} orientation direction. Respective pairs of lateral surfaces in the {111} orientation direction are obtained by means of an etching process which extend from mutually corresponding, lateral limits of both boundary surfaces. These pairs of lateral surfaces meet in a plane situated between the boundary surfaces and in which the semiconductor body exhibits a minimum cross-sectional surface. The area of employment comprises power thyristors.

REFERENCES:
patent: 3493820 (1970-02-01), Rosvold
patent: 3575644 (1971-04-01), Huth et al.
patent: 3611554 (1971-10-01), Garrett
patent: 3648131 (1972-03-01), Stuby
patent: 3697829 (1972-10-01), Huth et al.
patent: 3925807 (1975-12-01), Sonntag
patent: 3943547 (1976-03-01), Nagano et al.
patent: 3986200 (1976-10-01), Allison
patent: 3987479 (1976-10-01), Cornu et al.
patent: 3999211 (1976-12-01), Voss
"Thyristor Physics" by Adolph Blicher, Springer-Verlag, New York, 1976, pp. 198-200.
"Semiconductor Power Devices" by S. K. Ghandhi, John Wiley & Sons, London, 1977, p. 81.
"Physics of Semiconductor Devices" by S. M. Sze, 1969, pp. 320-340.

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