Methods of and apparatus for depositing a continuous film of min

Chemistry: electrical and wave energy – Processes and products – Vacuum arc discharge coating

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204298, 118664, 118665, 118715, 427 9, 427 10, 4272481, C23C 1500

Patent

active

044668724

ABSTRACT:
A film of material (29) is deposited on a substrate (15), as, for example, in a sputtering process, wherein a gas-permeable substrate (73) covers an opening (71) in a process chamber (14) of a passage communicating with a monitoring chamber (52). A monitoring gas is introduced into one of the chambers to diffuse through the gas-permeable substrate (73) into the other of the chambers. Its level of concentration is then monitored in at least one of the chambers while the film is being deposited. As the film deposits on workpiece substrates within the process chamber, the film also deposits on the surface of the gas-permeable substrate. When the film on such gas-permeable substrate forms a continuous surface, diffusion of the monitoring gas from one chamber to the other ceases. Consequently, an increased concentration level of the monitoring gas may be detected in the one chamber and a decreased concentration level may be detected in the other chamber. Such a change in the concentration level of the monitoring gas is a process check to determine the when a continuous film has been deposited.

REFERENCES:
patent: 3878085 (1975-04-01), Corbani
patent: 4025410 (1977-05-01), Stewart
patent: 4172020 (1979-10-01), Tisone et al.
patent: 4388342 (1983-06-01), Suzuki et al.

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