Chemistry: electrical and wave energy – Processes and products
Patent
1983-12-16
1984-08-21
Tufariello, Thomas
Chemistry: electrical and wave energy
Processes and products
204231, 204DIG7, 204DIG9, C25D 502, C25D 712, C25D 1700
Patent
active
044668643
ABSTRACT:
An article, such as a semiconductor wafer (31), is selectively electrolytically plated to form metal deposits, such as contacts (26), adjacent to anodes of diode regions within such wafer by mounting the wafer in a plating chamber (36) opposite first and second electrodes (61 and 62), filling the chamber (36) with a metal plating electrolyte (49) and applying alternatingly plating pulses between the wafer (31) and the first electrode (61) and deplating pulses between the wafer (31) and the second electrode (62). The plating pulses are current controlled yielding a predetermined total plating current. The deplating pulses are voltage controlled yielding a deplating current which tends to subside in the course of the plating operation. The electrolyte in the chamber is agitated by streams of electrolyte pumped at a comparatively high rate toward the wafer (31) to break down surface layers of electrolyte adjacent to the wafer.
REFERENCES:
patent: 2678909 (1954-05-01), Jernstedt
patent: 2893929 (1959-07-01), Schnable
patent: 3880725 (1975-04-01), Van Raalte
patent: 4396467 (1983-08-01), Anthony
Bacon Duane E.
Hecox Spencer S.
AT&T - Technologies, Inc.
Schellin W. O.
Tufariello Thomas
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