Field oxide termination and gate oxide

Details Field oxide termination and gate oxide Field oxide termination and gate oxide

1992-09-24

1993-06-08

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257353, 257354, 257634, 257637, 257644, 257650, H01L 2701, H01L 2713, H01L 2978, H01L 2934

Patent

active

052182142

ABSTRACT:
An integrated circuit has a silicon mesa disposed on a substrate and a field insulator structure in proximity to the mesa and having an opening over a top mesa surface. The opening, which exposes sidewalls in the structure, is positioned with respect to the mesa and has dimensions such that the structure is disposed to overlap a region of the mesa along an outer mesa periphery. A layer of polysilicon extends along a top surface of the structure and into the opening and adjacent to the mesa top surface. An insulator is disposed between the poly layer and the mesa top surface, the insulator having a layer of thermal gate oxide disposed adjacent to the poly layer and having a layer of pyrogenic oxide disposed between the thermal gate oxide layer and the mesa top surface.

REFERENCES:
patent: 4974051 (1990-11-01), Matloubian et al.
patent: 5124768 (1992-06-01), Mano et al.
patent: 5128733 (1992-07-01), Tyson

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