Method of fabricating a semiconductor device having silicided so

Details Method of fabricating a semiconductor device having silicided so Method of fabricating a semiconductor device having silicided so

1992-01-15

1993-06-08

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437188, 437192, 437202, 437931, 437 41, 437 44, 148DIG147, H01L 21336, H01L 2128

Patent

active

052179230

ABSTRACT:
A source/drain region of a MOS FET having a silicon substrate is covered with a metal silicide alloy layer. A silicon deposition layer is formed between the substrate and the silicide layer. The conductivity type of the deposition layer is different from that of the substrate, and the deposition layer per se functions as an impurity diffusion layer as the source/drain region or intervenes between the alloy layer and the impurity diffusion layer. The impurity diffusion layer, or the source/drain region, is formed in a shallow region in the substrate.

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