Method for manufacturing a bipolar transistor

Details Method for manufacturing a bipolar transistor Method for manufacturing a bipolar transistor

1991-06-10

1993-06-08

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

257 47, 148DIG10, 148DIG11, H01L 21265, H01L 2970

Patent

active

052179095

ABSTRACT:
A method for manufacturing a bipolar transistor in which the base, emitter and collector terminals are produced from a single, planar layer of, for example, polysilicon, directly deposited onto a substrate. The planar layer is doped by a first conductivity type for the base terminal. After masking with an implantation mask, covering a region of the planar layer for the base terminal and defining regions of the planar layer for the emitter and collector terminals, the regions for the emitter and collector terminals are doped by an implantation of a second conductivity type, the second conductivity type being opposite the first conductivity type. After a self-aligned supplementation of the implantation mask, for example, with the assistance of a spacer technique, with which the regions of the planar layer for the emitter and collector terminals are also covered, the planar layer is structured by anisotropic etching by using the supplemented implantation mask as an etching mask.

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Treitinger et al., "Ultra-Fast Silicon Bipolar Technology", Springer Series in Electronics and Photonics (1988).
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