Semiconductive MOS resistance network

Details Semiconductive MOS resistance network Semiconductive MOS resistance network

1986-02-27

1987-12-01

Mullins, James B.

Amplifiers

Sum and difference amplifiers

307568, 328127, 330 86, 330107, 330284, 330294, H03F 134

Patent

active

047107260

ABSTRACT:
A circuit useful as a voltage tunable resistive element comprises four matched MOS transistors in which each of the first and second have their drains interconnected to a first input terminal and each of the third and fourth have their drains interconnected to a second input terminal, the first and third have their sources interconnected to a first output terminal and the second and fourth have their sources interconnected to a second output terminal, and the first and fourth have their gates interconnected to a first control terminal and the second and third have their gates interconnected to a second control terminal. A continuous-time integrator is described which includes such a resistive element.

REFERENCES:
patent: 3757240 (1973-09-01), Fogg
patent: 4121183 (1978-10-01), Murphy
patent: 4275357 (1981-06-01), Nakayama et al.
patent: 4509019 (1985-04-01), Banu et al.
patent: 4523153 (1985-06-01), Itoh
patent: 4559498 (1985-12-01), Sokoloff

Affiliated with

Also associated with

Rating

Semiconductive MOS resistance network does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductive MOS resistance network, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductive MOS resistance network will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1933617