Selective chemical vapor deposition of aluminum, aluminum CVD ma

Coating processes – Coating by vapor – gas – or smoke – Metal coating

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437187, C23C 1600, H01L 2128

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active

052177564

ABSTRACT:
This invention provides a process for forming with high selectivity an Al film having good electrical conductivity at the uncoated portions of a substrate coated with a masking material by means of chamical vapor deposition, using an Al selective deposition material having good electrical conductivity without subjecting it preliminarily to cracking, characterized in that the process employs a molecular compound of trimethyl aluminum and dimethyl aluminum hydride as a starting material gas. This invention also provides an Al selective CVD material characterized in that it is an organic Al compound represented by the following formula:

REFERENCES:
patent: 3445493 (1969-05-01), Harwell
patent: 3453093 (1969-07-01), Kobetz et al.
patent: 4328261 (1982-05-01), Heinecke et al.
patent: 5091210 (1992-02-01), Mikoshiba et al.
patent: 5130459 (1992-07-01), Shinzawa
K. T. Tsubouchi et al., "Selective and Nonselective Deposition of Aluminum by LPCVD Using DMAH and Microregion Observation of Single-Crystal Aluminum with Scanning .mu.-RHEED Microscope" -1990 Symposium on VSLI-Technology-Jun. 4-7, 1990-pp. 5-6.

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