Method of producing semiconductor integrated circuit having para

Details Method of producing semiconductor integrated circuit having para Method of producing semiconductor integrated circuit having para

1986-12-04

1987-12-01

Powell, William A.

Fishing, trapping, and vermin destroying

156648, 156657, 1566611, 156662, 357 44, 437 41, H01L 2122, H01L 2138, B44C 122, C03C 1500

Patent

active

047102659

ABSTRACT:
A complementary MOS type integrated circuit is produced by a method which comprises the steps of: disposing a first mask material layer on the surface of a semiconductor substrate, the first mask material layer having a first impurity introducing region corresponding to a desired well forming pattern; forming a well region by selectively doping an impurity into the surface of the substrate through the first impurity introducing region; forming a second mask material layer in such a manner as to cover both the first impurity introducing region and the first mask material layer; disposing first and second mask layers on the second mask material layer, the first and second mask layers respectively corresponding to a first active region pattern within the well region and a second active region pattern outside the well region, thereby defining a second impurity introducing region corresponding to a desired parasitic channel stopper pattern between the stack portion of the first and second mask material layers and the first mask layer; selectively ion-implanting an impurity into the surface of the well region through the second impurity introducing region; selectively removing the first and second mask material layers by selective etching using the first and second mask layers; and selectively thermally oxidizing the surface of the substrate using the remaining portions of the first and second mask material layers as a mask, thereby simultaneously forming a field oxide film and a parasitic channel stopper region containing the implanted impurity. According to this method, the parasitic channel stopper region is self-aligned with both the well region and the field oxide film.

REFERENCES:
patent: 4435896 (1984-03-01), Parrillo et al.
patent: 4466171 (1984-08-01), Jochems
patent: 4558508 (1985-12-01), Kinney et al.
patent: 4567640 (1986-02-01), Fang et al.
patent: 4577391 (1986-03-01), Hsia et al.

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