Semiconductor optical amplifying element

Details Semiconductor optical amplifying element Semiconductor optical amplifying element

1989-05-10

1990-01-30

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 99, H01S 308

Patent

active

048978450

ABSTRACT:
A semiconductor optical amplifying element is disclosed which has a semiconductor multilayer structure including at least a first semiconductor layer for providing an optical gain in response to the injection of carriers thereinto, and a p-side electrode and an n-side electrode for the carrier injection. A first reflecting surface and a second reflecting surface are disposed thickwisely of the semiconductor multilayer structure and opposite to each other thereacross. The element is designed so that light incident thereon from the thickwise direction of the semiconductor multilayer structure is amplified by propagating through the element perpendicularly to the thickwise direction of the semiconductor multilayer structure while being multiple-reflected between the first reflecting surface and the second reflecting surface.

REFERENCES:
patent: 4766470 (1988-08-01), Scholl et al.

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