Semiconductor device having a bipolar transistor with emitter se

Details Semiconductor device having a bipolar transistor with emitter se Semiconductor device having a bipolar transistor with emitter se

1986-06-24

1987-08-25

Carroll, J.

357 34, 357 36, 357 51, 357 68, H01L 2972, H01L 2910, H01L 2702, H01L 2348

Patent

active

046896554

ABSTRACT:
An integrated circuit or other semiconductor device, comprises a semiconductor body with a bipolar transistor consisting of electrically parallel transistor structures at least a number of which have a different value of emitter series resistance. The transistor emitter zone comprises a number of active emitter regions which constitute the emitters of the different transistor structures, a number of emitter contact regions contacted by emitter metallization via emitter contact windows, and a number of emitter connection regions which interconnect the emitter contact regions and the active emitter regions. The different values of emitter series resistance of the transistor structures are realized by having a different size or location with respect to the emitter connection regions for at least a number of the emitter contact windows, without necessitating a variation of the emitter zone geometry for each transistor structure. Preferably the emitter connection region are bounded by parts of the base zone which are situated within the emitter zone and between the emitter and base contact windows.

REFERENCES:
patent: 3358197 (1967-12-01), Scarlett
patent: 3609460 (1971-09-01), Ollendorf
patent: 3704398 (1972-11-01), Fukino
patent: 3740621 (1973-06-01), Carley
patent: 4205332 (1980-05-01), Conti et al.
patent: 4231059 (1980-10-01), Hower et al.
patent: 4266236 (1981-05-01), Ueda
patent: 4370670 (1983-01-01), Nawata et al.

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