Apparatus for probing semiconductor wafers

Electricity: measuring and testing – Conductor identification or location – Inaccessible

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324 62, 324 65P, G01R 2714

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043353509

ABSTRACT:
A two-head probe apparatus measures sheet resistivities of the thin layer on a semiconductor wafer. On one side of the wafer, a first probe head makes contact for injecting current into the wafer and measuring the voltage difference between two surface points. On the other side of the wafer, a second probe head makes contact for monitoring the substrate potential at two probed points on the wafer substrate. The second probe is disposed below a platen supporting the wafer, and the probe electrodes are moved into spring biased contact with the wafer through apertures in the platen by a vacuum actuated piston. Circuitry coupled to the two probe heads computes leakage current and displays sheet resistivity.

REFERENCES:
patent: 2142619 (1939-01-01), Sciaky
patent: 3303418 (1967-02-01), Rose
patent: 3416078 (1968-12-01), Boncuk et al.
patent: 3735253 (1973-05-01), Seger
Gee et al., A Versatile Over-Under Four-Point Probe Apparatus, Zenith Radio Research Corporation Notes on Experimental Technique & Apparatus, _J. Phys. E. (GB), vol. 4, No. 1, Jan. 1971, pp. 70-72.

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