Thyristor having adjustable breakover voltage and method of manu

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357 39, H01L 2974, H01L 29747

Patent

active

050499653

ABSTRACT:
A thyristor with an npnp layer sequence in which the p-emitter (4) comprises a sub-region (15) in the lateral region of an ignition contact (8) or of a light-sensitive zone (17a), this sub-region (15) being provided with a higher doping concentration that the remaining part of the p-emitter (4). A controllable over voltage ignition of the thyristor occurs at an adjustable, reduced breakover voltage, such breakover voltage being established by selectively irradiating a zone of the thyristor to reduce the breakover voltage point.

REFERENCES:
patent: 4278475 (1981-07-01), Bartko et al.
patent: 4572947 (1986-02-01), Kao et al.

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