Method for producing beam-shaping diaphragms for lithographic de

Details Method for producing beam-shaping diaphragms for lithographic de Method for producing beam-shaping diaphragms for lithographic de

1989-05-17

1991-09-17

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430321, 430323, 430324, 2505051, 2504922, 2504923, G03F 900

Patent

active

050494600

ABSTRACT:
Methods for producing beam shaping diaphragms for lithographic devices in which a silicon layer is epitaxially deposited on a semiconductor body and the epitaxial layer is formed in the central region as a self-supporting membrane and is formed with preferably straight line-shaped quadratic recesses which have perpendicular limiting surfaces. Photolithographic processes and galvanic second-casting techniques may be used in the process for producing the beam-shaping diaphragm. The beam-shaping diaphragm can also be produced in lightly doped epitaxial layers by using electro-chemical etching methods.

REFERENCES:
patent: 4417946 (1983-11-01), Bohlen et al.
patent: 4448865 (1984-05-01), Bohlen et al.
patent: 4647517 (1987-03-01), Hersener et al.
patent: 4724328 (1988-02-01), Lischke
patent: 4855197 (1989-08-01), Zapka et al.
patent: 4932872 (1990-06-01), Waggener
Kasper, E. and Bean, J., Silicon-Molecular Beam Epitaxy, CRC Press, Inc., Boca Raton, Florida, 1988.

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