Semiconductor power circuit breaker structure obviating secondar

Details Semiconductor power circuit breaker structure obviating secondar Semiconductor power circuit breaker structure obviating secondar

1987-12-21

1988-12-20

Clawson, Jr., Joseph E.

357 20, 357 36, 357 86, H01L 2974

Patent

active

047928395

ABSTRACT:
A semiconductor power circuit breaker has several emitter zones of a width (b) less than 30 microns. The semiconductor device may be in the form of a switching transistor or a gate turn off (GTO) thyristor. The spacing (a) of the emitter zones is less than the thickness (d) of the low doped inner zone. The power circuit breaker can thus be operated up to the collector-base break-down voltage U.sub.CBO without a destruction through "second break-down" occurring. On the other hand, high current carrying capacity is maintained, since it depends practically only on the chip surface instead of being a function of emitter area.

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