Orthogonal bipolar transistor

Details Orthogonal bipolar transistor Orthogonal bipolar transistor

1986-02-26

1988-12-20

James, Andrew J.

357 4, 357 59, 357 34, 357 56, H01L 2972, H01L 2712, H01L 2904, H01L 2906

Patent

active

047928379

ABSTRACT:
An orthogonal bipolar transistor structure is disclosed which is particularly suitable for formation in relatively thin epitaxial layers on insulating substrates. The emitter of the transistor is disposed directly over the base region while a collector region may be arranged on one side of or surrounding the base region. Alternatively, the collector region may be a pair of regions disposed laterally on opposite sides of the base region.

REFERENCES:
patent: 3246214 (1966-04-01), Hugh
patent: 3943555 (1976-03-01), Mueller et al.
patent: 4195307 (1980-03-01), Jambotkar
patent: 4266238 (1981-05-01), Nishizawa
patent: 4272880 (1981-06-01), Pashley
patent: 4446611 (1984-05-01), Bergeron
patent: 4532534 (1985-07-01), Ford et al.
patent: 4583106 (1986-04-01), Anantha et al.

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