Superlattice semiconductor having high carrier density

Details Superlattice semiconductor having high carrier density Superlattice semiconductor having high carrier density

1987-04-24

1988-12-20

Larkins, William D.

Fishing, trapping, and vermin destroying

357 4, 357 61, 357 63, 437110, 437133, H01L 29267, H01L 29205, H01L 29207

Patent

active

047928328

ABSTRACT:
The superlattice type semiconductor material has a multilayered structure of first layers of semiconductor containing impurities and having a thickness thinner than electron or hole wavelength and second layers of semiconductor free from impurities or insulator having such a thickness that electrons or holes may penetrate by tunneling effect, the first and second layers being alternately piled. Electrons or holes distribute uniformly over the entire of the multilayered structure to show a property of uniform semiconductor material.

REFERENCES:
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patent: 4439782 (1984-03-01), Holonyak, Jr.
patent: 4450463 (1984-05-01), Chin
patent: 4695857 (1987-09-01), Baba et al.
"(Invited) MBE-Grown GaAs/N-AlGaAs Heterostructures and Their Application to High Electron Mobility Transistors", Hiyamizu et al., Japanese Journal Applied Physics, vol. 21, (1982), Supplement 21-1, pp. 161-168.
"Low Noise Normally On and Normally Off Two-Dimensional Electron Gas Field-Effect Transistors", Laviron et al., Applied Physics Letters 40(6), Mar. 15, 1982, pp. 530-532.
"A New Al.sub.0.3 Ga.sub.0.7 As/GaAs Modulation-Doped FET", Kopp et al., IEEE Electron Device Letters, vol. EDL-3, No. 5, May 1982, pp. 109-111.

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