Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

Filed on

1992-02-06

Date issued

1993-10-12

Examiner

Davie, James W.

Patent Class

Coherent light generators

SubClass

Particular active media

SubSubClass

Semiconductor

Other Related Categories

372 45, H01S 319

Type

Patent

Status

active

Patent number

052532658

Description

ABSTRACT:
A semiconductor laser device having an active layer which is comprised of a quantum well layer formed of a mixed crystal material, and barrier layers provided on both sides of the quantum well layer in such a manner as to sandwich the same, is characterized in that Ge is thermally diffused in a portion of the active layer to disorder the quantum well layer and the barrier layers at that portion so as to form a non-light-emitting area with a low refractive index, while the quantum well layer and the barrier layers at a portion where Ge is not diffused is formed as a refractive index waveguide which is a light-emitting area.

REFERENCES:
patent: 4727556 (1988-02-01), Burnharn et al.
D. G. Deppe, et al., "Buried heterostructure Al.sub.x Ga.sub.1-x As-GaAs quantum well lasers by Ge diffusion from the vapor", Appl. Phys. Lett. 52(10), Mar. 7, 1988, pp. 825-827.

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