Process for producing a dielectric insulator separated substrate

Details Process for producing a dielectric insulator separated substrate Process for producing a dielectric insulator separated substrate

1980-04-10

1982-01-19

Rutledge, L. Dewayne

Metal working

Method of mechanical manufacture

Assembling or joining

29576W, 148 15, 148174, 156631, 156645, 156649, 156662, 357 49, 357 54, 357 56, 357 59, 427 93, H01L 21304, H01L 2176

Patent

active

043109659

ABSTRACT:
An improved dielectric insulator separated substrate for semiconductor integrated circuits is obtained by forming a lamination of at least three thin-polycrystalline layers and dielectric films interposed therebetween on a thick polycrystalline layer of the substrate. A thickness x(.mu.m) of each of the thin-polycrystalline layers is represented by the formula:

REFERENCES:
patent: 3574007 (1971-04-01), Hugle
patent: 3624463 (1971-11-01), Davidsohn
patent: 3655439 (1972-04-01), Seiter
patent: 3826699 (1974-07-01), Sawazaki et al.
patent: 3862852 (1975-01-01), Kamins
patent: 3967309 (1976-06-01), Miyata
patent: 4017341 (1977-04-01), Suzuki et al.
patent: 4079506 (1978-03-01), Suzuki et al.
patent: 4173674 (1979-11-01), Mimura et al.

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