Heterojunction bipolar transistor structure having low base-coll

Details Heterojunction bipolar transistor structure having low base-coll Heterojunction bipolar transistor structure having low base-coll

1993-01-19

1993-10-12

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257586, 257587, 257577, H01L 29161, H01L 29205, H01L 2972

Patent

active

052528413

ABSTRACT:
The base-collector capacitance in a heterojunction bipolar transistor (HBT) (50) is reduced, thereby providing increased cutoff frequency and power gain, by eliminating a portion of a collector contact layer (54) which normally underlies a base electrode (66). A similar effect may be produced by forming the collector contact layer (54) such that it initially extends into the area (54c) under the base electrode (66), and subsequently rendering the collector contact layer (54) in this area (54c) semiinsulative by proton bombardment. A ballast resistor layer (70) is formed between an emitter layer (62) and an overlying emitter electrode (68) to prevent thermal runaway and hot spot formation. A plurality of the HBTs (50) may be arranged in a distributed amplifier configuration (80) including contact electrode bus lines (84,88) having a geometry designed to provide high thermal efficiency, and input and output circuit matching characteristics.

REFERENCES:
patent: 4380774 (1983-04-01), Yoder
"High-Performance AlGaAs/GaAs HBT's Utilizing Proton-Implanted Buried Layers and Highly Doped Base Layers", Nakajima et al. IEEE Trans on Elect. Dev. Dec. 1987 pp. 2393-2395.

Affiliated with

Also associated with

Rating

Heterojunction bipolar transistor structure having low base-coll does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Heterojunction bipolar transistor structure having low base-coll, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Heterojunction bipolar transistor structure having low base-coll will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1906699