High thermal resistance bonding material and semiconductor struc

Details High thermal resistance bonding material and semiconductor struc High thermal resistance bonding material and semiconductor struc

1989-02-03

1989-12-19

Hille, Rolf

357 80, 357 81, H01L 2328, H01L 3902, H01L 2302

Patent

active

048886343

ABSTRACT:
A high thermal resistance bonding material for semiconductor chips includes a binder such as epoxy or polyimide and high thermal resistance material dispersed therein such as glass micropheres, glass beads, ceramic microspheres and ceramic beads. The particles of high thermal resistance material are sieved to obtain particles of generally uniform size. In plastic-encapsulated semiconductor chips, each chip is enveloped by the bonding material.

REFERENCES:
patent: 3996602 (1976-12-01), Goldberg et al.
patent: 4328150 (1982-05-01), Kondow et al.
patent: 4803543 (1989-02-01), Inayoshi

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