Patent
1987-05-19
1989-12-19
Clawson, Jr., Joseph E.
357 30, 357 43, 357 38, 357 52, 357 86, H01L 2978
Patent
active
048886270
ABSTRACT:
A monolithically integrated lateral semiconductor device preferably comprising a pair of inherent transistors driven by an inherent lateral four layer structure is disclosed. The disclosed device includes inherent vertical and lateral bipolar transistors. An inherent lateral four layer structure is also included within the device to provide a sufficient base drive to fully turn on both the lateral and vertical inherent bipolar transistors. The lateral four layer structure can be controlled through an insulated gate.
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Plummer, J. D. et al., "Insulated-Gate Planar Thyristors: I-Structure and Basic Operation", IEEE Trasactions on Electron Devices, vol. ED-27, No. 2, Feb. 1980, pp. 380-386.
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Russell, J. P. et al., "The COMFET-A New high Conductance MOS-Gated Device", IEEE Electron Device Letter, vol. EDL-4, No. 3, Mar. 1983, pp. 63-65.
Baliga Bantval J.
Pattanayak Deva N.
Clawson Jr. Joseph E.
Davis Jr. James C.
General Electric Company
Ochis Robert
Snyder Marvin
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