Method of fabricating salicide

Details Method of fabricating salicide Method of fabricating salicide

1999-01-11

2000-02-15

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438722, 438734, H01L 2100, H01L 21336

Patent

active

06025274&

ABSTRACT:
A method fabricating salicide. A substrate having a polysilicon gate and a source/drain region is provided. A silicon oxide layer is formed on the polysilicon gate and the substrate. Using dry etch, a part of the silicon oxide layer is removed to leave a spacer with a waistline on a side wall of the polysilicon gate. A metal layer is formed on the polysilicon gate and the source/drain region. A rapid thermal process is performed to form a metal silicide

REFERENCES:
patent: 5612239 (1997-03-01), Lin et al.
patent: 5776835 (1998-07-01), Yeh et al.
patent: 5915204 (1999-06-01), Sumi
patent: 5953612 (1999-09-01), Lin et al.

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